[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-1] Operating of 4H-SiC CMOS UV image sensor pixel device at 200°C high temperature

〇Masayuki Tsutsumi¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.RIND, Hiroshima Univ., 2.QST, 3.AIST)

Keywords:Silicon Carbide, CMOS Image Sensor, UV Photodiode

Harsh environment electronics are expected to be used in a variety of areas, such as high temperature, high radiation, and other harsh environments. SiC, a wide bandgap semiconductor, is expected to have excellent high temperature resistance. In this study, the pixel part of a CMOS image sensor was fabricated using 4H-SiC, and high temperature operation experiments up to 200°C were conducted.