Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P04 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[20p-P04-1] Operating of 4H-SiC CMOS UV image sensor pixel device at 200°C high temperature

〇Masayuki Tsutsumi¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.RIND, Hiroshima Univ., 2.QST, 3.AIST)

4:00 PM - 6:00 PM

[20p-P04-2] P/N MOSFETs operations in Single Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits

〇Toya Kai¹, Kazutoshi Kojima², Takeshi Ohshima³, Yasunori Tanaka², Shin-Ichiro Kuroki¹ (1.RIND, Hiroshima Univ., 2.AIST, 3.QST)

4:00 PM - 6:00 PM

[20p-P04-3] Comparison of switching characteristics of 650V breakdown voltage power devices

〇Yoshiyuki Hattori¹, Tetsu Kachi² (1.Daido university, 2.Nagoya university)

4:00 PM - 6:00 PM

[20p-P04-4] High Temperature Resistant Interconnection for Power Devices by using Ni Nanoparticles and Al Microparticles Paste

〇(DC)Keiko Koshiba^1,2, Yasunori Tanaka², Tomonori Iizuka², Kohei Tatsumi^1,2 (1.Waseda Univ. IPS, 2.Waseda Univ. IPS Research Center)

4:00 PM - 6:00 PM

▲ [20p-P04-5] Design of Depletion Mode Ga₂O₃ MOSFET for e-vehicles and other power device applications

〇(PC)SYED SADIQUE ANWER ASKARI¹, GUFRAN AHMAD² (1.Dept. of Electronics Engineering, IIT (ISM) Dhanbad, 2.Dept. of Electrical Engineering, Daalbagh Educational Institute (Deemed University), Agra)

4:00 PM - 6:00 PM

[20p-P04-6] Evaluation of nonvolatile memory characteristics of GaN/AlN resonant tunneling diodes fabricated on Si (111) substrate

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

4:00 PM - 6:00 PM

[20p-P04-7] Effects of defect levels in vicinity of GaN surface on C-V characteristics of MOS structure with Mg-doped p-GaN (2)

〇(M2)Yuya Tamamura¹, Takahide Nukariya¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[20p-P04-8] Characterization of interface states near conduction band in lightly Mg-implanted GaN after high-temperature cap annealing using n-GaN MOS structure

〇Yuki Hatakeyama¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[20p-P04-9] Effects of photo-electrochemical etching on C-V characteristics of MOS structure with Mg-doped p-GaN

〇(M1)Takahide Nukariya¹, Yuya Tamamura¹, Kouta Kubo¹, Taketomo Sato¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

4:00 PM - 6:00 PM

[20p-P04-10] Self-terminating photo-electrochemical (PEC) etching for recessed-gate fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi¹, Kosaku Ito¹, Ryota Ochi¹, Taketomo Sato¹ (1.RCIQE)

4:00 PM - 6:00 PM

[20p-P04-11] Electrochemical characterization of n-type and p-type GaN surface

〇Umi Takatsu¹, Kouta Kubo¹, Taketomo Sato¹ (1.RCIQE,Hokkaido Univ.)

4:00 PM - 6:00 PM

[20p-P04-12] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

〇Shota Kuwahara¹, Yuuki Sato¹, Tadashi Ohachi¹, Shinzo Yoshikado¹ (1.Doshisha Univ.)

4:00 PM - 6:00 PM

[20p-P04-13] Formation and characterization of SiO₂ by Atomic-Species-Enhanced Chemical Vapor Deposition

〇Ryota Ouchi¹, Sho Yamagata¹, Masakazu Furukawa², Akihiro Wakahara¹, Hiroshi Okada¹ (1.Toyohashi Univ. Tech., 2.Aries Res. Co., Ltd.)

4:00 PM - 6:00 PM

[20p-P04-14] Contactless-Photoelectrochemical (CL-PEC) etching on process-damaged n-GaN surface (2)

〇Yoshito Osawa¹, Hiroki Ogami¹, Ryota Ochi¹, Fumimasa Horikiri², Noboru Fukuhara², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

4:00 PM - 6:00 PM

[20p-P04-15] Local structure analysis of Mg dopant in Mg-doped GaN by photoelectron holography

〇Shingo Kuwaharada¹, Mutsunori Uenuma¹, Hiroto Tomita¹, Masaki Tanaka¹, Sun Zexu¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[20p-P04-16] Improvement of GaN-MOS fabrication process based on process-informatics

〇(M2)Takuto Harada¹, Shintaro Harada¹, Mutsunori Uenuma¹, Tomoyuki Uenuma¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[20p-P04-17] Defect density extraction of GaN epitaxial wafer with back-gate voltage application

〇Kisara Nishida¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech School of Eng, 2.Tokyo Tech IIR)

4:00 PM - 6:00 PM

[20p-P04-18] Thermal Desorption of SiO₂Thin Film on SiC Substrate by XPS and Scanning Auger Electron Spectroscopy

〇Masayoshi Sato¹, Yuta Murono¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

4:00 PM - 6:00 PM

[20p-P04-19] Study on low-temperature Si-dots formation on SiC by Silicon-cap annealing with a-Si:H layer

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

4:00 PM - 6:00 PM

[20p-P04-20] Mapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

〇Hiroki Imabayashi¹, Kenji Shiojima¹, Tetsu Kachi² (1.Univ. of Fukui, 2.Nagoya Univ.)

4:00 PM - 6:00 PM

[20p-P04-21] Rapid Annealing of Gallium Nitride Substrate by Microwave Magnetic Field and its Characterization of the Substrate

〇Takashi Nakamura¹, Masateru Nishioka¹, Heajeong Cheong², Atsushi Tanaka², Hiroshi Amano² (1.AIST, 2.Nagoya Univ.)

Session information

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-1] Operating of 4H-SiC CMOS UV image sensor pixel device at 200°C high temperature

[20p-P04-2] P/N MOSFETs operations in Single Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits

[20p-P04-3] Comparison of switching characteristics of 650V breakdown voltage power devices

[20p-P04-4] High Temperature Resistant Interconnection for Power Devices by using Ni Nanoparticles and Al Microparticles Paste

▲ [20p-P04-5] Design of Depletion Mode Ga₂O₃ MOSFET for e-vehicles and other power device applications

[20p-P04-6] Evaluation of nonvolatile memory characteristics of GaN/AlN resonant tunneling diodes fabricated on Si (111) substrate

[20p-P04-7] Effects of defect levels in vicinity of GaN surface on C-V characteristics of MOS structure with Mg-doped p-GaN (2)

[20p-P04-8] Characterization of interface states near conduction band in lightly Mg-implanted GaN after high-temperature cap annealing using n-GaN MOS structure

[20p-P04-9] Effects of photo-electrochemical etching on C-V characteristics of MOS structure with Mg-doped p-GaN

[20p-P04-10] Self-terminating photo-electrochemical (PEC) etching for recessed-gate fabrication on AlGaN/GaN HEMTs

[20p-P04-11] Electrochemical characterization of n-type and p-type GaN surface

[20p-P04-12] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

[20p-P04-13] Formation and characterization of SiO₂ by Atomic-Species-Enhanced Chemical Vapor Deposition

[20p-P04-14] Contactless-Photoelectrochemical (CL-PEC) etching on process-damaged n-GaN surface (2)

[20p-P04-15] Local structure analysis of Mg dopant in Mg-doped GaN by photoelectron holography

[20p-P04-16] Improvement of GaN-MOS fabrication process based on process-informatics

[20p-P04-17] Defect density extraction of GaN epitaxial wafer with back-gate voltage application

[20p-P04-18] Thermal Desorption of SiO₂Thin Film on SiC Substrate by XPS and Scanning Auger Electron Spectroscopy

[20p-P04-19] Study on low-temperature Si-dots formation on SiC by Silicon-cap annealing with a-Si:H layer

[20p-P04-20] Mapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

[20p-P04-21] Rapid Annealing of Gallium Nitride Substrate by Microwave Magnetic Field and its Characterization of the Substrate

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Session information

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

▲ [20p-P04-5] Design of Depletion Mode Ga2O3 MOSFET for e-vehicles and other power device applications

Authenticate

▲ [20p-P04-5] Design of Depletion Mode Ga₂O₃ MOSFET for e-vehicles and other power device applications