[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-10] Self-terminating photo-electrochemical (PEC) etching for recessed-gate fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi¹, Kosaku Ito¹, Ryota Ochi¹, Taketomo Sato¹ (1.RCIQE)

Keywords:nitride semiconductor, GaN