[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-14] Contactless-Photoelectrochemical (CL-PEC) etching on process-damaged n-GaN surface (2)

〇Yoshito Osawa¹, Hiroki Ogami¹, Ryota Ochi¹, Fumimasa Horikiri², Noboru Fukuhara², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

Keywords:semiconductor, GaN, Contactless-Photoelectrochemical etching