[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-15] Local structure analysis of Mg dopant in Mg-doped GaN by photoelectron holography

〇Shingo Kuwaharada¹, Mutsunori Uenuma¹, Hiroto Tomita¹, Masaki Tanaka¹, Sun Zexu¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:gallium nitride (GaN), doping site

Toward the realization of vertical GaN MOS power devices, the p-type GaN formation process that satisfies device design requirements is an important issue. In this study, the dopant local structure consisting of Mg atoms and peripheral atoms in Mg-doped GaN was elucidated by photoelectron holography. As a result, it was found that the Mg dopant local structure in p-type GaN can be evaluated by photoelectron holography.