[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-3] Comparison of switching characteristics of 650V breakdown voltage power devices

〇Yoshiyuki Hattori¹, Tetsu Kachi² (1.Daido university, 2.Nagoya university)

Keywords:power semiconductor

As power devices with breakdown voltage of 650 V, Si-IGBT, Si-Super Junction MOSFET, SiC- MOSFET, and Cascode GaN-FET are commercially available.In this study, we compared the switching characteristics of the above four devices with the same rating (withstand voltage 650V, drain current 40A) and the same package (TO-247) using a double pulse test.