[21a-A406-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[21a-A406-3] Low Temperature Growth of Ge and Si/Ge Films on SiO₂ and Their TEM Observations

〇Hiroto Kondo¹, Keisuke Arimoto¹, Kosuke Hara¹, Junji Yamanaka¹ (1.Univ. of Yamanashi)

Keywords:polycrystalline Si films, polycrystalline Ge films

In the field of semiconductor thin films, it is important to realize both low temperature crystal growth and high carrier mobility. In this study, we carried out experimental work for this purpose. First, we produced poly-crystalline Ge films on SiO₂ glass substrates at 300 C and 400 C. After that, we deposited Si onto the poly-crystalline Ge films at 400 C and succeeded in producing poly-crystalline Si/Ge/SiO₂. The growth temperature 400 C was lower than the ordinally growth temperature of poly-crystalline Si films directly onto SiO₂ glass substrates.