Evaluation of memory effect of ReRAM using proton doped EuNiO<sub>3</sub> thin film

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Wed. Sep 21, 2022 9:00 AM - 11:45 AM B204 (B204)

9:30 AM - 9:45 AM

〇Yuki Taniguchi¹, Haobo Li¹, Azusa N Hattori¹, Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ)

Keywords:strongly correlated electron system, Iontronics, ReRAM