[21a-B204-1~10] 6.3 Oxide electronics

▲ [21a-B204-4] Ultra-sharp conductance change with proton potential in WO₃ heterostructure

〇SatyaPrakash Pati¹, Satoshi Hamasuna¹, Takeaki Yajima¹ (1.Kyushu Univ.)

Keywords:Protonic Devices, Electrical Control, Tungsten Oxide

Electrical control of protonic devices is one of the promising candidates for neuromorphic devices. The advantage of protons among other ions in an ionic device is its smallest size which could lead to design an ultra-low power consumption and high endurance device. The transport of protons into a solid could result in the change of its conductance up to several orders. The conductivity of a proton conductor could be tuned by proton diffusion due to accompanied filling of electrons into the conduction band. In our earlier report, we have successfully demonstrated the ultra-low voltage control of conductance change in a 2-terminal protonic device comprising an amorphous WO₃ layer as a proton conductor. Herein, we systematically studied the effect of hydrogen partial pressure (proton potential) on the change of electrical conductance and speed in a Pt/WO₃/Pd trilayer structure.