[21a-B204-1~10] 6.3 Oxide electronics

[21a-B204-5] Anomalous durability of (001) plane against oxygen vacancy injection at electrode/rutile-TiO₂ interfaces

〇Taku Suzuki¹, Isao Sakaguchi¹ (1.NIMS)

Keywords:resistive switching

We have investigated the electro-coloration of a rutile TiO₂ single crystal by the voltage-bias annealing in dry air between a point cathode and a flat anode. The electro-coloration is due to the conductive oxygen vacancy (V_O) filament that grows from the cathode/TiO₂ interface to mm size. We proposed that the growth mechanism of this macroscopic size V_O filament is the oxygen (O²⁻) transfer reaction at the anode interface followed by the thermally assisted-electric field-induced V_O diffusion to the cathode. It was found that V_O is not injected into the anode/(001) interface in the oxygen transfer reaction. The proposed mechanism was examined by the surface-sensitive TOF-SIMS and the bulk-sensitive dynamic SIMS.