[21a-B204-1~10] 6.3 Oxide electronics

[21a-B204-6] Carrier Density and Neuromorphic Forgetting Properties of Pt/Ti_0.99Sc_0.01O_2-δ/Pt multilayer

〇(M2)Mitsuki Taniguchi¹, Tomoasa Takada¹, Kisara Tomiyoshi¹, Kaito Yako¹, Airi Maekawa¹, Daisuke Shiga², Hiroshi Kumigashira², Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

Keywords:Pt/Sc-TiO2/Pt multilayer, forgetting properties, neuromorphic device

Devices have been reported that use the migration of ions through voltage pulses to realize short- and long-term memory properties. Then we previously realized low voltage operation by using TiO₂.
However, it remains unclear that memory erasure by backward voltage pulses.
This study aimed to realize memory erasure by applying backward voltage pulses to Pt/Ti_0.99Sc_0.01O_2-δ/Pt multilayer. In this presentation, the mechanism of the forgetting property will be discussed based on the results of various structural and electrical properties.