[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

[21a-C301-4] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate

〇(M2)Liang Zhao¹, Koji Agata¹, Shingo Ito¹, Ryosuke Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:Optical waveguide, Silicon photonics, Simulation

In order to realize high-speed, large-capacity communication of large-scale integrated circuits with low power consumption, integration of InP-based optical devices on Si substrates is being actively studied. On the other hand, we have proposed a method for integrating and manufacturing optical devices by directly bonding thin-film InP and Si substrates and growing InP-based crystals on the InP / Si substrates.
This time, the waveguide loss due to the surface defects generated in the fabrication of the InP / Si substrate was simulated by COMSOL, and the optical loss coefficient was calculated.