[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

[21a-C301-3] Well layer thickness dependence on threshold current of SCH-MQW laser diode on InP/Si substrate.

〇Ryosuke Yada¹, Kouji Agata¹, Shingo Ito¹, Liang Zhao¹, Sae Aoki¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:QW laser, MOVPE, Si substrate

直接貼付InP/Si基板上とInP基板上にMOVPE法で結晶成長させた1.5μm帯 GaInAsP SCH-MQWレーザの井戸層厚変化による閾値電流密度依存性について報告します。