[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

[21a-M206-8] [Young Scientist Presentation Award Speech] P-Body Doping Dependence of Hall Mobility for SiC (0001), (11-20), (1-100) MOSFETs

〇Koji Ito¹, Hajime Tanaka^1,2, Masahiro Horita^1,3, Jun Suda^1,3, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ., 3.Nagoya Univ.)

Keywords:SiC, MOS, MOSFET