Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Koji Kita(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [21a-M206-1] Thermal Oxidation of SiC Surface in CO₂ Atmosphere

〇(B)Ryuta Deguchi¹, Takuji Hosoi¹ (1.Kwansei Gakuin Univ.)

9:15 AM - 9:30 AM

△ [21a-M206-2] Deep levels formed near the SiO₂/SiC interface by thermal oxidation of SiC

〇Haruki Fujii¹, Kazutaka Kanegae¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

△ [21a-M206-3] Low-temperature characteristics of high-quality 4H-SiC (1120)/SiO₂ interface formed by the oxidation-minimizing process

〇Kyota Mikami¹, Keita Tachiki,¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

△ [21a-M206-4] Improved performance of 4H-SiC(0001) CMOS devices by post-nitridation treatment in CO₂

〇Mizuki Kuniyoshi^1,2, Kidist Moges¹, Takuma Kobayashi¹, Takuji Hosoi³, Takayoshi Shimura¹, Keita Tachiki⁴, Tsunenobu Kimoto⁴, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC, Inc., 3.Kwansei Gakuin Univ., 4.Kyoto Univ.)

10:00 AM - 10:15 AM

[21a-M206-5] Analysis of near-interface trap density distribution in 4H-SiC MOSFETs by 3 level charge pumping characteristics

〇(M2)Atsuhiro Akiba¹, Yano Hiroshi¹ (1.Univ. of Tsukuba)

10:15 AM - 10:30 AM

△ [21a-M206-6] Evaluation of threshold voltage shift in SiC MOSFETs by AC gate stress

〇(M1)Yuya Enjoji¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

10:30 AM - 10:45 AM

[21a-M206-7] First-principles study on NO-annealed SiC/SiO₂ interface atomic structure

〇Mizuho Ohmoto¹, Naoki Komatsu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ.)

11:00 AM - 11:15 AM

[21a-M206-8] [Young Scientist Presentation Award Speech] P-Body Doping Dependence of Hall Mobility for SiC (0001), (11-20), (1-100) MOSFETs

〇Koji Ito¹, Hajime Tanaka^1,2, Masahiro Horita^1,3, Jun Suda^1,3, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ., 3.Nagoya Univ.)

11:15 AM - 11:30 AM

△ [21a-M206-9] Leakage current characteristics in NO-annealed SiC(1-100) MOS devices.

〇Asato Suzuki¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

11:30 AM - 11:45 AM

△ [21a-M206-10] Band alignment evaluation of NO-nitrided SiO₂/SiC structures on non-basal planes

〇Takato Nakanuma¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Akitaka Yoshigoe³, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

11:45 AM - 12:00 PM

△ [21a-M206-11] Degradation of NO-Nitrided 4H-SiC(11-20) MOS Devices by UV Irradiation

〇Hiroki Fujimoto¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

12:00 PM - 12:15 PM

[21a-M206-12] Development of Etching Process for Fabrication of Ga₂O₃ MOSFETs with Self-Aligned Recessed Gate

〇Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ)

12:15 PM - 12:30 PM

[21a-M206-13] 3659 V 0.37 A/mm NO₂ doped diamond MOSFETs fabricated on misoriented diamond

Niloy Chandra Saha¹, Seong-Woo Kim², Koji Koyama², Toshiyuki Oishi¹, 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Session information

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

△ [21a-M206-1] Thermal Oxidation of SiC Surface in CO₂ Atmosphere

△ [21a-M206-2] Deep levels formed near the SiO₂/SiC interface by thermal oxidation of SiC

△ [21a-M206-3] Low-temperature characteristics of high-quality 4H-SiC (1120)/SiO₂ interface formed by the oxidation-minimizing process

△ [21a-M206-4] Improved performance of 4H-SiC(0001) CMOS devices by post-nitridation treatment in CO₂

[21a-M206-5] Analysis of near-interface trap density distribution in 4H-SiC MOSFETs by 3 level charge pumping characteristics

△ [21a-M206-6] Evaluation of threshold voltage shift in SiC MOSFETs by AC gate stress

[21a-M206-7] First-principles study on NO-annealed SiC/SiO₂ interface atomic structure

[21a-M206-8] [Young Scientist Presentation Award Speech] P-Body Doping Dependence of Hall Mobility for SiC (0001), (11-20), (1-100) MOSFETs

△ [21a-M206-9] Leakage current characteristics in NO-annealed SiC(1-100) MOS devices.

△ [21a-M206-10] Band alignment evaluation of NO-nitrided SiO₂/SiC structures on non-basal planes

△ [21a-M206-11] Degradation of NO-Nitrided 4H-SiC(11-20) MOS Devices by UV Irradiation

[21a-M206-12] Development of Etching Process for Fabrication of Ga₂O₃ MOSFETs with Self-Aligned Recessed Gate

[21a-M206-13] 3659 V 0.37 A/mm NO₂ doped diamond MOSFETs fabricated on misoriented diamond

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Session information

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

△ [21a-M206-1] Thermal Oxidation of SiC Surface in CO2 Atmosphere

△ [21a-M206-2] Deep levels formed near the SiO2/SiC interface by thermal oxidation of SiC

△ [21a-M206-3] Low-temperature characteristics of high-quality 4H-SiC (1120)/SiO2 interface formed by the oxidation-minimizing process

△ [21a-M206-4] Improved performance of 4H-SiC(0001) CMOS devices by post-nitridation treatment in CO2

[21a-M206-5] Analysis of near-interface trap density distribution in 4H-SiC MOSFETs by 3 level charge pumping characteristics

△ [21a-M206-6] Evaluation of threshold voltage shift in SiC MOSFETs by AC gate stress

[21a-M206-7] First-principles study on NO-annealed SiC/SiO2 interface atomic structure

[21a-M206-8] [Young Scientist Presentation Award Speech] P-Body Doping Dependence of Hall Mobility for SiC (0001), (11-20), (1-100) MOSFETs

△ [21a-M206-9] Leakage current characteristics in NO-annealed SiC(1-100) MOS devices.

△ [21a-M206-10] Band alignment evaluation of NO-nitrided SiO2/SiC structures on non-basal planes

△ [21a-M206-11] Degradation of NO-Nitrided 4H-SiC(11-20) MOS Devices by UV Irradiation

[21a-M206-12] Development of Etching Process for Fabrication of Ga2O3 MOSFETs with Self-Aligned Recessed Gate

[21a-M206-13] 3659 V 0.37 A/mm NO2 doped diamond MOSFETs fabricated on misoriented diamond

Authenticate

△ [21a-M206-1] Thermal Oxidation of SiC Surface in CO₂ Atmosphere

△ [21a-M206-2] Deep levels formed near the SiO₂/SiC interface by thermal oxidation of SiC

△ [21a-M206-3] Low-temperature characteristics of high-quality 4H-SiC (1120)/SiO₂ interface formed by the oxidation-minimizing process

△ [21a-M206-4] Improved performance of 4H-SiC(0001) CMOS devices by post-nitridation treatment in CO₂

[21a-M206-7] First-principles study on NO-annealed SiC/SiO₂ interface atomic structure

△ [21a-M206-10] Band alignment evaluation of NO-nitrided SiO₂/SiC structures on non-basal planes

[21a-M206-12] Development of Etching Process for Fabrication of Ga₂O₃ MOSFETs with Self-Aligned Recessed Gate

[21a-M206-13] 3659 V 0.37 A/mm NO₂ doped diamond MOSFETs fabricated on misoriented diamond