Self-formation of Ge1−xSnx quantum dots with high thermal stability

Kaoru Hashimoto; Shigehisa Shibayama; Koji Asaka; Masashi Kurosawa; Mitsuo Sakashita; Osamu Nakatsuka

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[21p-A106-1~18] 15.5 Group IV crystals and alloys

Wed. Sep 21, 2022 1:00 PM - 5:45 PM A106 (A106)

Kaoru Toko(Univ. of Tsukuba), Ryo Matsumura(National Institute for Materials Science (NIMS))

4:00 PM - 4:15 PM

[21p-A106-12] Self-formation of Ge_1−xSn_x quantum dots with high thermal stability

〇Kaoru Hashimoto¹, Shigehisa Shibayama¹, Koji Asaka¹, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:GeSn, surface migration, Quantum dots

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Presentation information

[21p-A106-1~18] 15.5 Group IV crystals and alloys

[21p-A106-12] Self-formation of Ge1−xSnx quantum dots with high thermal stability

[21p-A106-12] Self-formation of Ge_1−xSn_x quantum dots with high thermal stability