[21p-A205-1~21] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

△ [21p-A205-12] Investigation of Optical properties of Au-InGaAs alloys for plasmonic waveguide photodetectors

〇(M2)Taketoshi Nakayama¹, Toprasertpong Kasidit¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. Tokyo)

Keywords:Silicon photonics, Photodetector, III-V semiconductor

As the volume of data communications has continued to increase in recent years, it is essential to improve the operating speed of photodetectors in optical communication systems. To achieve both broadband and high sensitivity at the same time, plasmon waveguide photodetectors, in which light is strongly confined in a gap between two metals, have been investigated as photodetectors. We propose a plasmon waveguide photodetector based on an alloy of Au and InGaAs on a III-V on insulator (III-V-OI) platform, where InGaAs has high electron mobility and large optical absorption, which is expected to provide fast operation and high sensitivity in photodetectors. In this report, we measure the optical constants of Au-InGaAs alloys and verify the applicability of Au-InGaAs alloys to plasmon waveguide photodetectors by simulation.