[21p-B201-1~16] 15.4 III-V-group nitride crystals

[21p-B201-1] [Young Scientist Presentation Award Speech] 230-nm Far-UV Second Harmonic Generationfrom HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide

〇Hiroto Honda¹, Kanako Shojiki^1,2, Kenjiro Uesugi^3,4, Miyake Hideto², Kazunori Serita⁵, Hironaru Murakami⁵, Masayoshi Tonouchi⁵, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Grad. Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Mie Univ., 3.MRPCO Mie Univ., 4.Grad. Sch. of RIS. Mie Univ., 5.ILE Osaka Univ.)

Keywords:Ultraviolet light, Nitride semiconductor, Optical Devices

Far-ultraviolet (far-UV) light near 230 nm in wavelength can be used for harmless disinfection and sterilization of human body, so far-UV is currently attracting attention. We have proposed a transverse quasi-phase-matched (QPM) wavelength conversion device consisting of a polarity inverted AlN and GaN, which are nonlinear optical materials. Although this device can be expected to have high wavelength conversion efficiency, it is difficult to fabricate a polarity inverted structure. Therefore, we propose an HfO₂ / AlN transverse QPM wavelength conversion device in which HfO₂, a linear optical material, is deposited on AlN by sputtering. We made a second harmonic generation (SHG) device and confirmed the generation of far-ultraviolet light.