[21p-B201-1~16] 15.4 III-V-group nitride crystals

[21p-B201-2] 230-nm Far-UV Second Harmonic Generation from Double-Layer Polarity Inverted AlN Transverse Quasi-Phase-Matched Channel Waveguide

〇Hiroto Honda¹, Kanako Shojiki^1,2, Kenjiro Uesugi^3,4, Hideto Miyake², Kazunori Serita⁵, Hironaru Murakami⁵, Masayoshi Tonouchi⁵, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Grad. Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Mie Univ., 3.MRPCO Mie Univ., 4.Grad. Sch. of RIS. Mie Univ., 5.ILE Osaka Univ.)

Keywords:Ultraviolet light, Nitride semiconductor, Optical Devices

Far-ultraviolet light sources with a wavelength of around 230 nm are in increasing demand for disinfection and sterilization applications that are harmless to the human body. We have proposed a transverse quasi-phase-matched (QPM) wavelength conversion device consisting of a polarity inverted structure of AlN and GaN, which are nonlinear optical materials. The spatter annealing method made it possible to fabricate an polarity inverted AlN film and a channel waveguide was fabricated using the polarity inverted AlN. In this presentation, we report the 230 nm far-ultraviolet second harmonic generation using that waveguide.