Study on GaN growth by sputtering for MQS laser with tunnel junction

Yukimi Jinno; Shiori Yamamura; Shiori Ii; Mizuki Takahashi; Yuki Yamanaka; Sae Katsuro; Soma Inaba; Nanami Nakayama; Ayaka Shima; Junya Iihama; Yoshiro Kususe; Masami Mesuda; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-B201-1~16] 15.4 III-V-group nitride crystals

Wed. Sep 21, 2022 1:30 PM - 6:00 PM B201 (B201)

Ryuji Katayama(Osaka Univ.), Mitsuru Funato(Kyoto Univ.), Kanako Shojiki(Mie Univ.)

4:00 PM - 4:15 PM

[21p-B201-10] Study on GaN growth by sputtering for MQS laser with tunnel junction

〇Yukimi Jinno¹, Shiori Yamamura¹, Shiori Ii¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Sae Katsuro¹, Soma Inaba¹, Nanami Nakayama¹, Ayaka Shima¹, Junya Iihama², Yoshiro Kususe², Masami Mesuda², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Tosoh Corporation)

Keywords:nanowire, MultipleQuantumShell

« Previous in this session
Next in this session »

▲