[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [21p-B203-14] Temperature-dependences of carrier concentration and Hall mobility in α-In₂O₃ films grown by mist CVD

〇Akito Taguchi¹, Takeyoshi Onuma¹, Ken Goto², Kentaro Kaneko³, Yoshinao Kumagai², Tohru Honda¹, Shizuo Fujita³, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Tokyo Univ. Agric. and Tech., 3.Kyoto Univ.)

Keywords:Mist CVD, indium oxide, carrier concentration and Hall mobility

α-In₂O₃ films were grown by mist CVD method. And, we evaluated temperature dependences of carrier concentration and Hall mobility in those samples.