[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [21p-B203-7] Evaluation Index of Buffer Layer for Single-Crystal ZnO Thin Films on Sapphire Substrates

〇Naoto Yamashita¹, Yuta Nakamura¹, Kunihiro Kamataki¹, Takamasa Okumura¹, Naho Itagaki¹, Kazunori Koga^1,2, Masaharu Shiratani¹ (1.Kyushu Univ., 2.NINS)

Keywords:zinc oxide, crystal growth, inverted SK mode

Inverted SK mode growth is a cutting-edge technology for heteroepitaxial growth with a lattice constants mismatch. Recently, by forming a buffer layer involving a three-dimensional island, single crystalline zinc oxide thin film was successfully grown on a sapphire substrate with a large lattice constant mismatch of 18%. In this study, the buffer layers were prepared by changing the substrate temperature and characterized the structure of these buffer layers and subsequently grown ZnO thin films. We found a quantitative relationship between them, which is useful for condition search.