[21p-B203-1~20] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [21p-B203-9] Dislocation Responsible for Leakage Current in HVPE (001) β-Ga₂O₃ SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

〇(D)Sayleap Sdoeung¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK)

Keywords:ultrawide bandgap, crystal defects, Schottky barrier diode

β-gallium oxide (β-Ga₂O₃) exhibits an ultrawide bandgap (4.8 eV) and a high breakdown field (8 MV/cm) which renders it promising for high-efficiency power devices. Recently, we observed probed-induced defects and line-shaped defects as killer defects that degrade the performance of these devices. However, the influence of dislocations in SBD is not clear yet. In this work, we found dislocation as a killer defect by using ultra-high sensitive emission microscopy and synchrotron X-ray topography. Experimental results revealed that this dislocation corresponds to a reverse leakage current of -0.98 μA at -100 V.