[21p-C102-1~17] 9.4 熱電変換

▼ [21p-C102-9] Degenerated hole doping and enhanced thermoelectric figure-of-merit ZT in layered SnSe by isovalent Te ion substitution

〇XINYI HE¹、Haoyun ZHANG¹、Takumi NOSE¹、Takayoshi KATSE¹、Terumasa TADANO²、Keisuke IDE¹、Hideo HOSONO³、Toshio KAMIYA¹ (1.MSL, Tokyo Tech、2.NIMS、3.MCES, Tokyo Tech)

キーワード：Thermoelectric material, Carrier doping, Phonon transport