[21p-C105-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

△ [21p-C105-3] Transient characteristics of 65-nm generation bulk transistors at 4.2 K operation

〇(M1)Tomohisa Miyao¹, Takahisa Tanaka¹, Itsuki Imanishi¹, Masayuki Ichikawa², Shuya Nakagawa², Hiroki Ishikuro², Toshitsugu Sakamoto³, Munehiro Tada³, Ken Uchida¹ (1.The Univ. of Tokyo, 2.Keio Univ., 3.Nanobridge Semiconductor)

Keywords:Cryo-CMOS, Transient, Pulse

Cryo-CMOS technology is important for the realization of quantum computers. However, transient characteristics of transistors have been rarely reported yet. In this study, the transient characteristics of drain current in 65-nm CMOS were evaluated. us-order transients were observed at 4.2 K, and they were not caused by self-heating but by the long hole emission time constant of acceptor at 4.2 K. The findings obtained in this study are important for accurate LSI design at low temperatures.