A Study on Improvement of Output Characteristics of Tunnel FET by Pocket Structure

Naoyuki Onishi; Riku Fujii; Koki Endo; Yan Wu; Yoshihiro Takahashi

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[21p-C105-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Sep 21, 2022 1:30 PM - 4:30 PM C105 (C105)

Takeaki Yajima(Kyushu Univ.), Takahiro Mori(AIST)

2:15 PM - 2:30 PM

[21p-C105-4] A Study on Improvement of Output Characteristics of Tunnel FET by Pocket Structure

〇(M1)Naoyuki Onishi¹, Riku Fujii¹, Koki Endo¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

Keywords:Tunnel FET

When a structure formed by forming a Pocket region was applied to the Source-Body interface of the TFET, improvement of the I_D-V_D rise characteristic was confirmed in the n-channel type. Therefore, for the p-channel TFET to which the Pocket structure was applied, we investigated the concentration distribution that can be expected to improve the characteristics using device simulation.