[21p-C105-1~11] 13.5 デバイス／配線／集積化技術

▲ [21p-C105-8] Highly-asymmetric-strain (110) SiGe-on-insulator pMOSFETs with extremely-thin body channels down to 3.2 nm fabricated by using Ge condensation technique

〇CHIATSONG CHEN¹、Xueyang Han¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)

キーワード：SGOI, extremely-thin body, asymmetric strain