The 83rd JSAP Autumn Meeting 2022

Presentation information

Symposium (Oral)

Symposium » Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

Wed. Sep 21, 2022 1:30 PM - 5:35 PM M206 (Multimedia Research Hall)

Heiji Watanabe(Osaka Univ.), Digh Hisamoto(Hitachi)

3:05 PM - 3:35 PM

[21p-M206-5] Characterization of Chemical Bonding and Electronic States of Dielectric/GaN Interfaces - Insights from Photoemission Studies

Seiichi Miyazaki Miyazaki1, Akio Ohta1 (1.Nagoya Univ.)

Keywords:GaN, dielectric interfaces, photoelectron spectroscopy

The results obtained from the characterization of chemical bonding features and electronic states, especially energy distribution of defect states, of GaN surfaces and near the interfaces between GaN and dielectrics by means of X-ray photoelectron spectroscopy, XPS, and total photoelectron yield spectroscopy, PYS, will be presented to discuss a guideline for the interface control.