WSe<sub>2</sub> n/p FET using Aluminum-Scandium (AlSc) Alloy and Tungsten Oxide (WO<sub>x</sub>) for Source/Drain Contact and its Application to CMOS Inverter

Takamasa Kawanago; Ryosuke Kajikawa; Kazuto Mizutani; SungLin Tsai; Iriya Muneta; Takuya Hoshii; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi

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Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[22a-B202-1~11] 17.3 Layered materials

Thu. Sep 22, 2022 9:00 AM - 12:00 PM B202 (B202)

Noriyuki Urakami(Shinshu Univ.)

9:30 AM - 9:45 AM

[22a-B202-3] WSe₂ n/p FET using Aluminum-Scandium (AlSc) Alloy and Tungsten Oxide (WO_x) for Source/Drain Contact and its Application to CMOS Inverter

〇Takamasa Kawanago¹, Ryosuke Kajikawa², Kazuto Mizutani², SungLin Tsai², Iriya Muneta², Takuya Hoshii², Kuniyuki Kakushima², Kazuo Tsutsui¹, Hitoshi Wakabayashi² (1.Tokyo Tech FIRST, 2.Tokyo Tech)

Keywords:WSe2, CMOSFET, CMOS Inverter

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Presentation information

[22a-B202-1~11] 17.3 Layered materials

[22a-B202-3] WSe2 n/p FET using Aluminum-Scandium (AlSc) Alloy and Tungsten Oxide (WOx) for Source/Drain Contact and its Application to CMOS Inverter

[22a-B202-3] WSe₂ n/p FET using Aluminum-Scandium (AlSc) Alloy and Tungsten Oxide (WO_x) for Source/Drain Contact and its Application to CMOS Inverter