The 83rd JSAP Autumn Meeting 2022

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Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 22, 2022 9:00 AM - 12:00 PM B204 (B204)

Mitsuru Sometani(AIST), Takuji Hosoi(Kwansei Gakuin Univ.)

9:45 AM - 10:00 AM

[22a-B204-4] Trap-assisted tunneling current through Schottky barriers on heavily P+-implanted SiC

〇Masahiro Hara1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)

Keywords:SiC, Ion implantation, Schottky barrier diodes