[22a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

△ [22a-B204-6] Contribution of a split-off band to tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

〇Takeaki Kitawaki¹, Masahiro Hara¹, Hajime Tanaka^1,2, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ.)

Keywords:silicon carbide, Schottky barrier diode, ohmic contact