The 83rd JSAP Autumn Meeting 2022

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Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 22, 2022 9:00 AM - 12:00 PM B204 (B204)

Mitsuru Sometani(AIST), Takuji Hosoi(Kwansei Gakuin Univ.)

10:45 AM - 11:00 AM

△ [22a-B204-7] Critical angle of MeV Al-ion channeling implantation into SiC

〇Akira Inoue1, Mitsuaki Kaneko1, Yoshiyuki Yonezawa2, Tsunenobu Kimoto1 (1.Kyoto Univ., 2.AIST)

Keywords:SiC, channeling implantation, critical angle