[22p-A200-1~8] Latest trend of quantum information technology based on semiconductors

[22p-A200-3] Prospect of Silicon Carbide for Quantum Technologies - Creation of Spin Defects and their Application as Quantum Sensing -

〇Takeshi Ohshima¹ (1.QST)

Keywords:Quantum sensing, Silicon carbide, Spin defects

Study of luminescence and/or spins of isolated defects in wide bandgap semiconductors toward quantum technologies is a hot topic. Silicon carbide (SiC) which is a wide bandgap semiconductor can be applied to power electronics with ultra-low-loss. Large size wafers with high quality are commercially available and device fabrication processes are developed. This indicates that SiC has advantage for a host material as quantum defects. Negatively charged silicon vacancy (V_Si) in SiC shows photoluminescence (PL) around 900 nm and the PL can be detected at room temperature. Also, spin can be manipulated at room temperature. Therefore, V_Si is regarded as a promising candidate for quantum sensing by which deep region can be detected at room temperature. In this presentation, creation methods for V_Si and quantum sensing based on V_Si will be introduced.