[22p-A202-1~22] 6.2 Carbon-based thin films

[22p-A202-13] Selective formation of oriented diamond nuclei on silicon by bias change

〇(M2)Satsuki Ariji¹, Go Morita¹, Akari Yoshida¹, Hideo Isshiki¹ (1.Dentsu Univ.)

Keywords:heteroepixial diamond on silicon, diamond thin films

In this study, the purpose is to generate only oriented nuclei on the silicon substrate due to their bias dependence and the difference in the generation time between unaligned diamond nuclei derived from the phase transition from a-C, oriented diamond nuclei derived from monomethylsilane (MMS).By shortening the negative bias time corresponding to the nucleation time, it was shown that nuclei derived from the a-C phase transition do not occur. It was also found that the nuclear density derived from MMS correlates with the negative bias time, bias voltage, and MMS flow rate. It was succeeded in selecting only MMS-derived nuclei by optimizing each condition.