Fabrication of a-CNx:H films with high nitrogen content from the microwave plasma CVD of the C2H2/N2 gas mixture ¾ Is [N]/([N]+[C])&gt;0.5 attainable?

Haruhiko Ito; Yuga Sato; Tsuneo Suzuki; Hidetoshi Saitoh

1:30 PM - 1:45 PM

[22p-A202-3] Fabrication of a-CN_x:H films with high nitrogen content from the microwave plasma CVD of the C₂H₂/N₂ gas mixture ¾ Is [N]/([N]+[C])>0.5 attainable?

〇Haruhiko Ito¹, Yuga Sato¹, Tsuneo Suzuki¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ Tech)

Keywords:Hydrogenated amorphous carbon nitride, Plasma CVD

This study reports on the fabrication of hydrogenated amorphous carbon nitride films with high nitrogen content. A trace amount of C2H2 was admixed into N2, and the mixed gas was excited by a microwave discharge. The dischrged products were deposited onto a Si substrate. The results of the atomic composition of the inside of the films measured with the XPS Nexsa showed thee maximum value of the [N]/([N]+[C]) ratio of 0.56.

Presentation information

[22p-A202-1~22] 6.2 Carbon-based thin films

[22p-A202-3] Fabrication of a-CN_x:H films with high nitrogen content from the microwave plasma CVD of the C₂H₂/N₂ gas mixture ¾ Is [N]/([N]+[C])>0.5 attainable?

Presentation information

[22p-A202-1~22] 6.2 Carbon-based thin films

[22p-A202-3] Fabrication of a-CNx:H films with high nitrogen content from the microwave plasma CVD of the C2H2/N2 gas mixture ¾ Is [N]/([N]+[C])>0.5 attainable?

[22p-A202-3] Fabrication of a-CN_x:H films with high nitrogen content from the microwave plasma CVD of the C₂H₂/N₂ gas mixture ¾ Is [N]/([N]+[C])>0.5 attainable?