[22p-A307-1~17] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

[22p-A307-15] Nondestructive observation of dielectric breakdown process in HfO₂-based ferroelectriccapacitors: Operando laser-based photoelectron emission microscopy

〇Hirokazu Fujiwara¹, Yuki Itoya², Masaharu Kobayashi³, Cedric Bareille^4,5, Shik Shin^5,6, Toshiyuki Taniuchi^4,5 (1.ISSP, 2.IIS, 3.d.lab, 4.GSFS, 5.MIRC, 6.Univ. of Tokyo)

Keywords:ferroelectric, oxide device, photoelectron emission microscopy

Ferroelectric capacitors with HfZrO₄ (HZO) undergo dielectric breakdown (DB) when AC stress is applied. This is one of the factors that determine the device lifetime. In this study, operando laser-based photoemission electron microscopy was performed on HZO capacitors to elucidate the DB process. Immediately after hard DB, a low-intensity spot was observed in the capacitor. This result is a successful nondestructive visualization of the conduction path formed after DB.