[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

△ [22p-B204-11] Exploration of the origin of reverse leakage current in GaN vertical p-n junction diodes grown by halide vapor phase epitaxy

〇Daiki Tanaka¹, Kazuki Ohnishi², Seiya Kawasaki¹, Shugo Nitta², Naoki Fujimoto², Hirotaka Watanabe², Atsushi Tanaka², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ, 3.ARC, Nagoya Univ, 4.VBL, Nagoya Univ)

Keywords:HVPE, p-n junction diode, GaN

Halide vapor phase epitaxy (HVPE) is attractive to fabricate vertical GaN power device structures because thick GaN layers with low residual impurity concentrations can be grown. Recently, we reported a vertical p-n junction diode grown by HVPE (HVPE-PND) with ideal avalanche breakdown. Unfortunately, it was observed a large reverse leakage current. In this study, we investigated the origin of reverse leakage of HVPE-PNDs by using a combination of an emission microscopy and an etch pit method.