[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

△ [22p-B204-14] Shockley-Read-Hall Lifetime in p-type Distributed-Polarization Doped AlGaN

〇Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Manato Deki^1,3, Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:GaN, Distributed Polarization Doping (DPD), SRH Lifetime

Distributed Polarization Doping (DPD) is attracting attention as a doping technology for III-nitride semiconductors without dopants. In particular, p-type DPD has the potential to suppress the introduction of vacancy clusters, which is a severe issue in Mg doping, and to significantly improve carrier lifetime. However, the carrier lifetime in films fabricated by p-type DPD has not been clarified. In this study, we report on the SRH lifetime in p-DPD AlGaN determined by analyses of the recombination current of p-n⁺ diodes.