[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-B204-7] Luminescence studies of Mg-implanted p-type GaN by ultra-high-pressure annealing

〇Kohei Shima¹, Hideki Sakurai^2,3,4, Shoji Ishibashi⁵, Akira Uedono⁶, Michal Bockowski^2,7, Jun Suda^2,3, Tetsu Kachi², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.IMaSS-Nagoya Univ., 3.Nagoya Univ., 4.ULVAC ATI, 5.AIST, 6.Univ. of Tsukuba, 7.IHPP PAS)

Keywords:GaN, Mg ion implantation, Photoluminescence