[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-B204-8] Fabrication of vertical GaN p-n junction diodes using Mg diffusion

〇Yuta Ito¹, Kawasaki Seiya¹, Woong Kwon¹, Kenya Shimamura¹, Narita Shuhei¹, Watanabe Hirotaka², Deki Manato³, Nitta Shugo², Honda Yoshio², Tanaka Atsushi², Amano Hiroshi^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:ion implantation, Diffusion

Local p-type conduction control of GaN is an essential technique for fabricating vertical power devices. We have focused on the Mg thermal diffusion method using MgGaN layers as a diffusion source as an alternative to the Mg ion implantation method. Compared to the ion implantation method, the thermal diffusion method has fewer defects formed during impurity addition, and thus p-type GaN can be fabricated by heat treatment under atmospheric pressure. In this study, we report on the fabrication and evaluation of p-n junction diodes using the Mg thermal diffusion method.