[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

△ [22p-B204-9] Mg Diffusion in p-GaN formed by thermal diffusion method

〇Kenya Shimamura¹, Yuta Itoh¹, Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Atsushi Tanaka², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:Gallium Nitride

The realization of localized p-type conduction is an important technique in the fabrication of GaN vertical power devices. Last time, we formed p-GaN by thermal diffusion from the surface metal Mg and evaluated and reported the Mg diffusion in the depth direction. Precise control of the depth and lateral distribution of locally doped Mg is essential for the realization of a high-voltage vertical GaN device with a peripheral withstand voltage structure. In this presentation, we report an investigation of the relationship between the depth and lateral direction of the p-GaN region width formed by thermal diffusion method.