[22p-C105-1~17] 1.6 Ultrasonics

△ [22p-C105-10] Deposition at Low Rates and Evaluation of Ta₂O₅ Piezoelectric Thin Film on SRO/Pt/Si Substrate

〇(M2)Keisuke Matsuura¹, Masashi Suzuki¹, Shoji Kakio¹, Masanori Kodera², Hiroshi Funakubo² (1.Univ. of Yamanashi, 2.Tokyo Institute of Technology)

Keywords:Ta2O5, Bulk Acoustic Wave, single crystal

The crystal structure and BAW properties of Ta₂O₅ thin films deposited on Pt/Si and SRO/Pt/Si substrates using an RF magnetron sputtering system were evaluated.
From the measured pole figure plots, it was determined that β-Ta₂O₅ was epitaxially grown, and the deposition at low rates result in highly crystalline films with increasing film thickness.
From the HBAR properties, the k_t² of β-Ta₂O₅ was larger than that of uniaxially oriented films, the k_t² increased with increasing crystallinity.