[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

[23a-B204-2] Fabrication of a 150 nm Class Y-Shaped Gate AlGaN/GaN HEMT Using i-Line Stepper

〇Yuji Ando^1,2, Hidemasa Takahashi¹, Ryutaro Makisako¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. Tech.)

Keywords:GaN, HEMT

A high throughput gate formation process combining i-line stepper and thermal reflow techniques was developed and applied to fabricate GaN-HEMTs. Since previously fabricated GaN-HEMTs involved an issue of large parasitic capacitances, we have newly developed a Y-shaped gate process based on these techniques to reduce the parasitic capacitances. Fabricated GaN-HEMTs showed improved ft and fmax indicating the reduced parasitics.