[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

[23a-B204-3] Fabrication of GaN FinFETs using selective area growth: Improvements of process to form growth windows

〇Yusuke Hisatsune¹, Takashi Ota¹, Mitsutaka Sasaki¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

Keywords:GaN, FinFET, selective area growth