The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 23, 2022 9:00 AM - 12:15 PM C101 (C101)

Haruhiko Udono(Ibaraki Univ.), Hirokazu Tatsuoka(Shizuoka Univ.)

9:30 AM - 9:45 AM

[23a-C101-3] Synthesis of Fe-silicides from Fe and CaSi2 powders in NaCl molten salt

Jilani Ansari1, Fumio Komeda1, Yosuke Shimura1,2, 〇Hirokazu Tatsuoka1 (1.Grad. Sch. Integr. Sci. & Technol. Shizuoka Univ., 2.RIE, Shizuoka Univ.)

Keywords:silicide semiconductor

b-FeSi2 has attracted attention for its potential as a thermoelectric and an optoelectronic material. b-FeSi2 layers were grown on FeSi substrates by molten salt technique using NaCl–NaF–Na2SiF6 and Si powder. In the case, Si atoms diffused into FeSi substrates to form b-FeSi2. Recently, metal-chlorides were used to synthesize Si- and silicide-nanosheet bundles using CaSi2 crystal as a template. The molten salt technique using metal-chlorides provides several advantages for developing structural properties of the nanosheets, by introducing a variety of compound nanosheet synthesis and surface modification. However, the Fe-silicide formation was not observed using FeCl2, and Fe-silicide formation process has not been understood yet. In this study, the formation of Fe-silicides was examined by molten salt technique using NaCl with Fe and CaSi2 powders.