[23a-C200-1~11] 15.4 III-V-group nitride crystals

[23a-C200-3] Fabrication of InGaN/GaN MQW fine nanopillar arrays by HEATE process

〇Takeki Aikawa¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Institute)

Keywords:semiconductor, nanopillar arrays, GaN

InGaN/GaN quantum well nanostructures are expected to be a promising technology to improve the performance of light emitting devices through strain relaxation and enhancement of light extraction efficiency. We have proposed a low-damage nanofabrication technique, hydrogen-atmosphere anisotropic etching (HEATE), for GaN-based materials, and fabricated position-controlled InGaN/GaN-MQW nanopillar arrays with diameters ranging from 9 to 1000 nm and systematically investigated the diameter dependence of light emission properties at room temperature.