[23a-C200-1~11] 15.4 III-V-group nitride crystals

[23a-C200-4] Formation and optical characteristics of GaN:Eu/GaN nanowires with high aspect ratio grown by organometallic vapor phase epitaxy

Takuma Yoshimura¹, 〇Jun Tatebayashi^1,2, Takaya Otabara¹, Dolf Timmerman¹, Shuhei Ichikawa^1,3, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.QIQB, Osaka Univ., 3.UHVEM, Osaka Univ.)

Keywords:Nanowires, Rare-earth-doped semiconductors

As a next-generation display technology for the realization of a super-smart society, our group is focusing on nanowire structures that can significantly miniaturize the pixel size. We have so far established the growth technology to dope Eu³⁺ ions, which is a red phosphor, into site-controlled GaN-based nanowires grown by organometallic vapor phase epitaxy. In this contribution, we report on the growth of GaN:Eu/GaN nanowires with a higher aspect ratio towards the realization of nanowire-based flexible devices under current injection, and characterize their optical/structural properties.