[23p-B204-1~9] 13.7 Compound and power devices, process technology and characterization

[23p-B204-3] Investigation of Multi-Photon Excitation PEC Etching for n-type GaN with Different Carrier Concentrations

〇Nonoka Niwa¹, Seiya Kawasaki¹, Takeru Kumabe¹, Hirotaka Watanabe², Yuta Furusawa², Atsushi Tanaka², Manato Deki³, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

Keywords:GaN

Damage-free processing of GaN by the PEC (Photo Enhanced Chemical) etching method is possible. However, it is difficult to fabricate complex three-dimensional structures of GaN by this method. Therefore, we have proposed a more flexible method using a multi-photon PEC etching method, which excites GaN locally and three-dimensionally. The etching rate must be controlled to realize the three-dimensional fabrication. In order to investigate the controllability of this method, we report the dependence of the etching rate on the GaN carrier concentration.