[23p-B204-1~9] 13.7 Compound and power devices, process technology and characterization

[23p-B204-8] Characterization of deep level traps in n-type AlN using capacitance transient measurements

〇Masanobu Hiroki¹, Yoshinori Sato¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN

We evaluated deep level traps for AlN Schottky barrie diode by using DLTS. In temperature spectrum for the heavy doped sample, peaks apeared in high-temperature range. The energy level was estimated to be 1.1-1.5 eV from Arrhenius plots. It is suggested the deep levels arise from defects generated by self-compensation effects.