[23p-C200-1~11] 15.4 III-V-group nitride crystals

△ [23p-C200-7] Characterization of luminescence properties of InGaN QWs on (20-21) GaN templates with flat surfaces by introducing Eu-doped GaN underlayers

〇Atsushi Takeo¹, Shuhei Ichikawa^1,2, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Keywords:semiconductor, semipolar, rare-earth

In general, a facet structure is easily formed on the GaN surface grown on a semipolar plane. In order to improve in-plane uniformity, it is necessary to suppress the formation of macro-facets. In this study, we investigated the change of growth mode and the effect of surface flattening due to the introduction of the Eu-doped GaN layer on (20-21) GaN. As a result, it was found that the facet formation is dramatically suppressed during the growth of the Eu-doped GaN layer. Furthermore, the in-plane uniformity of the emission photon energy of the upper InGaN quantum well layer is improved.